Rong Chen, Huazhong University of Science and Technology
20:00-21:00 pm, November 18, 2022, GMT+8
iCANX Talks platform (https://www.ican-x.com/talks)
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Nanomanufacturing has aroused rising research interest due to the various applications in electronics, catalysts, and batteries, and nanofabrication methods for fabricating materials with atomic-level control are becoming increasingly important. Atomic layer deposition (ALD) is a vapor-based method that provides excellent capabilities for depositing ultrathin solid films,nanoparticles and other nanoscale materials. Based on sequential, self-limiting vapor-surface reactions, ALD has become a popular nanofabrication tool because it provides exceptional conformality, thickness control at the angstrom level, and high-quality pinhole free films. In this talk, I will discuss the chemical principal and mechanisms that enable selective atomic layer deposition, which is gaining rapidly growing interest and has unlocked attractive avenues for the development of novel nanostructures by depositing atoms at desired surface locations. It has found versatile applications in semiconductor industry and beyond, for instance, composite catalysts. I will also show that atomic level processes enabled functional layers and encapsulation techniques. Various applications ranging from flexible displays to energetic materials in power batteries will be discussed. For future nanomanufacturing, ALD is still evolving to expand its abilities as an enabling technique, providing a window of opportunity for large scale atoms integration.
Professor Chen is a full professor at Huazhong University of Science and Technology with the School of Mechanical Science and Engineering, by courtesy of School of integrated circuits, optical and electronic information, China-EU Institute for clean and renewable energy of HUST, and college of future technologies. She received her M.Sc. and Ph.D. degrees from Stanford, B.S. from University of Science and Technology of China. She was a senior research scientist at Intel Labs before she joined HUST.
Prof. Chen is the PI for the key project of national natural science foundation of China, National Key R&D Program of China, National Basic Research Program of China, Innovation team leader of Hubei Province, etc. Her research focuses on atomic level manufacturing, by understanding surface science, and applying this knowledge to a range of problems in sustainable energy, semiconductor processing, and nanotechnology.
Prof. Chen is currently served as the corresponding expert of Engineering, associate editor of IJEM, editorial board member of AVS JVST A&B, ISO TC107 WG5 convener. She is the recipient of many prestigious national and international awards including Returned Overseas Chinese Innovative Talents, National Innovation Leading Talents, Xplore award, Distinguished young investigator of China frontiers of engineer, Science & Technology Award for Young Talents, the first prize of technical invention in Hubei Province, the Hubei Province Intellectual property award, Winner of the National Disruptive Technology Innovation Competition, Science and Technology Innovation China - Leading Technology award, IEEE SMC 2020 Distinguished Academic Contribution Award, the special gold prize (with the congratulations of the jury) of Geneva International Inventions, the Simon Karecki award of Semiconductor Research Association, the Texas Instruments Woman’s Fellowship for Leadership in Microelectronics, etc.